| PART |
Description |
Maker |
| BZT52C5V1 BZT52C43 |
Planar Die Construction
|
SHENZHEN YONGERJIA INDU...
|
| MM3Z47VS |
Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| MMBZ5250B |
Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| SAC7.0 SAC12 |
Glass Passivated Die Construction
|
Shanghai Semitech Semic...
|
| MBR830 MBR860 |
Guard Ring Die Construction for Transient Protection
|
Kersemi Electronic Co., Ltd.
|
| MJD112L MJD112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| CPW |
Commercial Power, Axial Lead, Fireproof Inorganic Construction, Complete Welded Construction, Non-inductive Styles Available, High Thermal Conductivity and Humidity Resistance
|
Vishay
|
| CPL |
Commercial Power, Axial Lead, Fireproof Inorganic Construction, Complete Welded Construction, High Thermal Conductivity and Moisture Resistance for Aqueous Board Wash Systems
|
Vishay
|
| 2SPT6341SD |
MultiEpitaxial Planar NPN Power Transistor Die
|
Solid States Devices, Inc
|
| S3K-13 S3MB |
Glass Passivated Die Construction
3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
|
Diodes Incorporated
|
| CPSL |
Low Value, Commercial Power, Four Lead, Fireproof Inorganic Construction, Current Sensing, High Power/Size Ratio, Complete Welded Construction, High Thermal Conductivity and Moisture Resistance for Aqueous Board Wash Systems
|
Vishay
|
| AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement)
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
SPANSION[SPANSION]
|
